VU COST
Naujos šviesą stiprinančios medžiagos ir prietaisai iš III-V-N junginių
Novel Gain Materials and Devices Based on III-V-N Compounds
Literatūra
Monografijos:
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2.Wide Band Gap Light Emitting Materials and Devices, ed. G. F. Neumark, I. L. Kuskovsky, H. Jiang, Wiley (2007) ISBN: 978-3-527-40331-8.
3.H. Markoc, Handbook of Nitride Semiconductors and Devices, Vol. I: Materials Properties, Physics and Growth, Wiley (2007) ISBN: 978-3-527-40837-5.
4.H. Markoc, Handbook of Nitride Semiconductors and Devices, Vol. II: Electronic and Optical Processes in Nitrides, Wiley (2007) ISBN: 978-3-527-40838-2.
5.H. Markoc, Handbook of Nitride Semiconductors and Devices, Vol. III: GaN-based Optical and Electronic Devices, Wiley (2007) ISBN: 978-3-527-40839-9.
6.Zhe Chuan Feng, III-nitride Semiconductor Materials (Hardcover), World Scientific Publishing Company (March 30, 2006) ISBN: 1860946364
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Apžvalginiai straipsniai:
1.M. S. Shur and R. Gaska, Deep-Ultraviolet Light-Emitting Diodes, IEEE Transactions on Electron Devices, 57, 12 (2010).
2.H. Jia, L. Guo, W. Wang, and H. Chen, Recent Progress in GaN-Based Light-Emitting Diodes, Advanced materials, 21, 4641 (2009).
3.V. S. Chivukula, M.S. Shur, D. Ciplys, Recent advances in application of acoustic, acousto-optic and photoacoustic methods in biology and medicine, phys. stat. sol. (a) 204, 3209 (2007).
4.M. A. Reshchikov and H. Markoc, Luminescence properties of defects in GaN, J. Appl. Phys. 97, 061301 (2005).
5.L. Liu and J. H. Edgar, Substrates for GaN epitaxy, Mater. Sci. Eng. 37, 61 (2002).
6.M. Razeghi, Short-wavelength solar-blind detectors – status, prospects, and markets, Proc. IEEE 90, 1006-1014 (2002).
7.S. C. Jain et al. III-nitrides: Growth, characterization, and properties, J. Appl. Phys. 87, 965-1006 (2000).